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transistor silicon carbide in italy

growth of silicon carbide, and resulting silicon carbide s

Method for reducing formation of microtransistor defect in epitaxial growth of silicon carbide, and resulting silicon carbide structure

MACOM

a wideband transistor optimized for DC-2 GHz operationSilicon Carbide, offering greater than 70% today announced at EuMW 2014 inRome, Italy, its

Field effect silicon carbide transistor

Field effect silicon carbide transistorIn a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-

Graphene News - Graphene Resources International

in Italy believe the solution lies in composite spin field effect transistor (spin-FET, Figure 1highly periodic bonding on a silicon carbide

TRANSISTOR AND DIODE TOPLOGIES IN SILICON CARBIDE THROUGH

SELF-ALIGNED TRANSISTOR AND DIODE TOPLOGIES IN SILICON CARBIDE THROUGH THE USE OF SELECTIVE EPITAXY OR SELECTIVE IMPLANTATIONMAZZOLA

Subthreshold current in silicon carbide buried-gate junction

Subthreshold current in silicon carbide buried-gate junction field-effect transistorAbstract A theory of subthreshold conduction in buried-gate junction field

field-effect transistor formed in silicon carbide

J. W. Palmour, Junction Field-Effect Transistor Formed in Silicon Carbide, U.S. Patent No. 5,264,713 November 23, 1993

on SiC Technology for MHD Mode Control in Fusion Experiments

new insulated-gate bipolar transistor modules based on silicon carbide (SiC)Consorzio RFX, Padua, ItalyAlberto FerroConsorzio RFX, Padua, ItalyLuca

Silicon Carbide SiC - STMicroelectronics

Silicon Carbide (SiC) is a wide bandgap material. Wide bandgap technologies have many advantages compared to Silicon. Operating temperatures are higher, heat

Voltage booster transistor - Singh, Ranbir

2012820-A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provi

Durchbruchsspannung Bipolar transistor in silicon carbide

Bipolartransistor in Siliziumkarbid mit verbesserter Durchbruchsspannung Bipolar transistor in silicon carbide with improved breakdown voltage

Home | GeneSiC Semiconductor, Inc

All-Silicon Carbide Junction Transistors-Diodes offered in a 4 Leaded mini-module Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-

Transistors- Richardson RFPD

Log In PRODUCTS Semiconductors - ICs Active RF Power Splitters AttenuatorsPower MOSFET Transistor Silicon Carbide Power Transistors/Modules RF Power

OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE

OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDEMd HasanuzzamanSyed K. IslamLeon M. TolbertBurak Ozpineci

A silicon carbide nanowire field effect transistor for DNA

Self-aligned transistor and diode toplogies in silicon carbide through the use of selective epitaxy or selective implantationA method of making vertical

High Power Insulated Gate Bipolar Transistors - Cree, Inc.

An insulated gate bipolar transistor (IGBT) includes a substrate having a first conductivity type, a drift layer having a second conductivity type opposite

Voltage booster transistor - Singh, Ranbir

2012820-A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provi

Siliziumcarbid-Junction-Feldeffekttransistor Silicon carbide

The invention relates to a lateral silicon carbide junction field effect transistor, wherein p and n type conductivity silicon carbide layers (3, 4) are

modulation in a silicon carbide bipolar junction transistor

Conductivity modulation in a silicon carbide bipolar junction transistorIn one general aspect, a silicon carbide bipolar junction transistor (BJT) can include

Fairchild Semiconductor’s Silicon Carbide (SiC) Solutions

20121113-SiC Bipolar Junction Transistors (BJTs), First in the Product Portfolio, Offer Lowest Total Power Losses at High Operation Temperatures

Voltage booster transistor - Singh, Ranbir

2012820-A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provi